People Jennifer GrayAssistant Professor, Department of Mechanical Engineering and Materials Science Email:
EducationPhD, Materials Science and Engineering, University of Virginia, 2005 MS, University of Washington, Materials Science and Engineering, 1994 BSE, Materials Science and Engineering, University of Pennsylvania, 1992 Professional InterestsDr. Gray’s research interests include the areas of thin film growth, surface science, nanotechnology, and materials characterization techniques including electron microscopy and surface analysis. Her recent research has focused on self-assembly processes during heteroepitaxial growth in order to form quantum dots and complex nanostructures. These types of structures are potentially useful for new nanoelectronic device applications. Characterization of these structures by atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) is important for understanding both how these structures form and their potential usefulness for device applications. She also uses substrate patterning techniques involving the focused ion beam (FIB) in order to control nucleation sites for these nanostructures. This forces the structures to be arranged into precise configurations, which is a necessary requirement for future device applications. Dr. Gray is also a faculty advisor for the dualbeam SEM/FIB in the NanoScale Fabrication and Characteriazaion Facility, part of the Petersen Institute of Nanoscience and Engineering. Selected PublicationsJ. A. Floro, J. L. Gray, and R. Hull, Short-range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions, in Lateral Alignment of Epitaxial Quantum Dots (Springer series on NanoScience and Technology, in press). J. L. Gray, R. Hull, J. A. Floro, Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates, J. Appl. Phys., in press. M. S. Leite, J. L. Gray, R. Hull, J. A. Floro, R. Magalhaes-Paniago, and G. Medeiros-Ribeiro, X-ray diffraction mapping of strain fields and chemical composition of SiGe: Si(001) quantum dot molecules, Phys. Rev. B 73, 121308 (2006). J. L. Gray, R. Hull, Chi-Hang Lam, P. Sutter, J. Means, and J. A. Floro, Beyond the heteroepitaxial quantum dot: self-assembling complex nanostructures controlled by strain and growth kinetics, Phys. Rev. B 72, 155323 (2005). J. A. Floro, J. L. Gray, S. Atha, N. Singh, D. M. Elzey, and R. Hull, Heteroepitaxial Self-Assembly of Higher-Complexity Structures By Combining Growth Control with Nanopatterning, Mater. Res. Soc. Symp. Proc. 849 (2005). J. L. Gray, S. Atha, R. Hull, and J. A. Floro, Hierarchical Self-Assembly of Epitaxial Semiconductor Nanostructures, Nano Lett. 4, 2447 (2004). J. L. Gray, R. Hull, and J. A. Floro, Formation of one dimensional surface grooves from pit instabilities in annealed SiGe/Si(100) epitaxial films, Appl. Phys. Lett. 85, 3253 (2004). J. L. Gray, N. Singh, D. M. Elzey, R. Hull, and J.A. Floro, Kinetic Size Selection Mechanisms in Heteroepitaxial Quantum Dot Molecules, Phys. Rev. Lett. 92, 135504 (2004). J. L. Gray, R. Hull, N. Singh, D. M. Elzey, J. A. Floro, P. Kumar, T. L. Pernell, J. C. Bean and T. Vandervelde, Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system, in Microscopy of Semiconducting Materials 2003, (IOP Publishing, Bristol, UK, 2004). . M. E. Ware, R. J. Nemanich, J. L. Gray, and R. Hull, Analysis of a nonorthoganal pattern of misfit dislocation arrays in SiGe epitaxy of high index Si substrates, J. of Appl. Phys. 95, 115 (2004). T. E. Vandervelde, P. Kumar, T. Kobayashi, J. L. Gray, T. Pernell, J. A. Floro, R. Hull, J. C. Bean, Growth of Quantum Fortress structures in Si1-xGex /Si via combinatorial deposition. Appl. Phys. Lett. 83, 5205 (2003). R. Hull, J. L. Gray, M. Kammler, T. Vandervelde, T. Kobayashi, P. Kumar, T. Pernell, J. C. Bean, J. A. Floro, F. M. Ross, Precision Placement of heteroepitaxial semiconductor quantum dots, Materials Science and Engineering B 101, 1 (2003). R. Hull, J. Gray, C. C. Wu, S. Atha, and J. A. Floro, Interaction between surface morphology and misfit dislocations as strain relaxation modes in lattice-mismatched heteroepitaxy, J. Phys.: Condens. Matter14, 12829 (2002). J. L. Gray, R. Hull, and J. A. Floro, Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of ‘‘quantum fortresses’’, Appl. Phys. Lett. 81, 2445 (2002). J. L. Gray, R. Hull, and J. A. Floro, SiGe Epilayer Stress Relaxation: Quantitative Relationships Between Evolution of Surface Morphology and Misfit Dislocation Arrays, Mater. Res. Soc. Symp. Proc. 696, 235 (2002). L.E. Rumaner, J. L. Gray, and F. S. Ohuchi, Nucleation and growth of GaSe on GaAs by Van der Waals epitaxy, Journal of Crystal Growth 177, 17 (1997). L.E. Rumaner, J. L. Gray, F. S. Ohuchi, K. Ueno, and A. Koma, Substrate Effects on the Nucleation and Growth of GaSe Layers by van der Waals Epitaxy, Mat. Res. Soc. Symp. Proc. 382, 101 (1995).
J. L. Gray, L. E. Rumaner, H. M. Yoo, and F. S. Ohuchi, Homoepitaxy versus Van der Waals Epitaxy of GaAs based heterostructures, Mat. Res. Soc. Symp. Proc. 340, 381 (1994). G. H. Kim, J. L. Gray, H. M. Yoo, and F. S. Ohuchi, Low temperature growth and characterization of GaAs epitaxial layer on (111)B GaAs substrates, J. Vac. Sci. Technol. B. 12, 1059 (1994). J. L. Gray and G. Kalonji, Symmetry and Structure Through Optical Diffraction, National Educators’ Workshop: Update 93, (NASA CP-3259, 1994). Curriculum VitaeJennifer Gray joined the faculty in September 2006. Before that she was a post-doc at University of Virginia, and did much of her research through a collaboration with Sandia National Labs. She received her Ph.D. from the University of Virginia in January 2005 (Control of strain-induced formation of self-assembled nanostructures during SiGe/Si heteroepitaxy). She also worked for Intel for five years in between getting her Ph.D. and her M.S. degrees. At Intel she started out as a process engineer in lithography, moved to failure analysis, and eventually became the analytical lab manager for one of the manufacturing fabs.
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