Faculty & Staff William StanchinaChairman and Professor, Department of Electrical and Computer Engineering EducationPh.D. (Electrical Engineering), University of Southern California, Los Angeles, 1978 PROFESSIONAL INTERESTSDr. Stanchina joined the department as Chair and Professor after 21 years at HRL Laboratories (formerly Hughes Research Laboratories) in Malibu, CA. At HRL he was directly involved in the research, development, and low volume production of high speed (40-150 GHz clock frequency) integrated circuits (ICs) based on indium phosphide heterojunction bipolar transistor technology. Since 1997, he was the Director of the Microelectronics Laboratory – an approximately 90 person organization that conducted R&D and pilot production of cutting-edge compound semiconductor IC technology including space-qualified InAlAs/InGaAs HEMT MMICs, GaN microwave and millimeter-wave MMICs, and ultra-low power narrow bandgap semiconductor ICs along with novel high frequency antennas and tunable filter technologies. At Pitt, Bill Stanchina is initiating a research program that investigates both the nano-scale potential and high temperature potential of wide bandgap heterostructure semiconductor devices and ICs. In addition to developing a fabrication capability utilizing the infrastructure available at the university, he is also establishing a device characterization laboratory for micro and nano-scale electronic devices in order to characterize their semiconductor device structure properties and to extract their equivalent circuit models. SELECTED PUBLICATIONSW.E. Stanchina (2007), Promise and Status of Solid-State Lighting, Engineering Sustainability 2007 Conference Extended Abstracts, Pittsburgh, PA. Mokhtari, M., C. Fields, R.D. Rajavel, M. Sokolich, J.F. Jensen, and W.E. Stanchina, “100+ GHz Static Divide-by-2 Circuit in InP DHBT Technology,” IEEE J. of Solid-State Circuits, Vol 38, No. 9, pp. 1540-1544, (September 2003). W.E. Stanchina, M. Sokolich, and K.R. Elliott, “Process and Integration Technologies for InP ICs,” invited paper in Conf. Proceedings 2001 International Conf. on Indium Phosphide and Related Materials, pp. 489-492, (May 2001). G. Raghavan, M. Sokolich, and W.E. Stanchina, “Indium Phosphide ICs Unleash the High-Frequency Spectrum,” IEEE Spectrum, Vol. 37, No. 10, pp. 47-52, (October 2000).
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