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About Us ABET ECE 1247

Semiconductor Device Theory

(3 credits)

Description: An introduction to electrical properties of solids and energy levels leading to modeling the functioning of semiconductor devices such as diodes, bipolar junction transistors and field effect transistors.

Prerequisites: Phys 0175 Corequisites: ECE/COE 0041 and Math 0250

Texts: Robert F. Pierret, Semiconductor Device Fundamentals, Addison Wesley, 1996.

Course Objectives: To provide the student with a working knowledge of the physical process inside a semiconductor and why diodes and transistors function the way they do.

Topics Covered: Semiconductor (chemical origin and crystal structure), carrier modeling (bonding model, energy band model, carrier properties, doping and equilibrium carrier distributions), carrier action (drift, diffusion, recombination-generation , minority carrier lifetime, equations of state), P-N junction electrostatics, P-N junction diode (I-V characteristics of ideal diodes, deviations from the ideal), applications of P-N junctions in other devices (photodiodes, solar cells, LEDs and temperature sensors), BJTs (static characteristics of ideal BJTs, Ebers-Moll model, small-signal equivalent circuits), MESFET (I D - V D relationships, a. c. response), MOSFET (qualitative theory of d.c. relationships and a.c. response).

Class/Laboratory Schedule: Class meets twice per week for 75 minutes of active learning. Students are given 12 homework assignments. They must participate in a midterm examinations and a cumulative final exam. Weekly announcements and lecture notes are posted on the web.

Professional Component Contributions: Students must actively utilize their basic knowledge of physics, mathematics and engineering to comprehend the course content and participate in the solutions of assignments. The knowledge gained is indispensable in understanding the functioning and limitations of a variety of devices which they will deal with in their live. It gives them an appreciation for the process of building models in order to explain rather complicated phenomena.

Prepared by: Dietrich W. Langer

Date Prepared: March 3, 2005

 

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